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MTB10010U

NPNmicrowavepowertransistor

DESCRIPTION NPNsiliconplanarepitaxialmicrowavetransistorwithinternalinputprematchingcellinaSOT440Ametalceramicpackagewithbaseconnectedtoflange. FEATURES •Inputprematchingcellallowsan easierdesignofcircuits •Diffusedemitterballastingresistors providing

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

MTP10010

Three-PhaseBridgeRectifier

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

MTP10010D

Three-PhaseBridgeRectifier

NELLSEMINell Semiconductor Co., Ltd

尼尔半导体尼尔半导体股份有限公司

MTSS10010

SLOTTEDSWITCH

INFRAREDLED+PHOTOIC APPLICATIONS ●OPTICALSWITCH ●SHAFTPOSITIONANDVELOCITYSENSOR

Marktech

Marktech Corporate

MUR10010

HIGHPOWER-SUPERFASTRECTIFIERS

AMERICASEMI

America Semiconductor, LLC

MUR10010

100AmpSupreFastRecoveryRectifier50to600Volts

Features •HighSurgeCapability •LowLeakage •LowForwardVoltageDrop •HighCurrentCapability •SupreFastswitchingforhighefficiency

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MUR10010CT

ULTRAFASTRECTIFIERS

ULTRAFASTSWITCHMODEPOWERRECTIFIER ...designedforuseinswitchingpowersupplies,inverters,andasfreewheelingdiodes.Thesestate-of-the-artdeviceshavethefollowingfeatures: ●DualDiodeConstruction ●LowLeakageCurrent ●LowForwardVoltage ●175°COperatingJunctionTemperatu

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MUR10010CT

100AmpSupreFastRecoveryRectifier50to600Volts

Features •HighSurgeCapability •LowLeakage •LowForwardVoltageDrop •HighCurrentCapability •SupreFastswitchingforhighefficiency

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MUR10010CT

SuperFastRecoveryDiode,100A

Features •DualDiodeConstruction •LowLeakageCurrent •Lowforwardvoltagedrop •Highsurgecurrentcapability •SuperFastSwitching

NAINA

Naina Semiconductor ltd.

MUR10010CT

HIGHPOWER-SUPERFASTRECTIFIERS

Features •HighSurgeCapability •Typesupto600VVRRM

AMERICASEMI

America Semiconductor, LLC

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