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SI4410BDY

N-Channel30-V(D-S)MOSFET

FEATURES •TrenchFETPowerMOSFET •100RgTested APPLICATIONS •BatterySwitch •LoadSwitch

VishayVishay Siliconix

威世科技威世科技半导体

SI4410DY

N-channelenhancementmodefield-effecttransistor

Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: Si4410DYinSOT96-1(SO8). Features ■Lowon-stateresistance ■Fastswitching ■TrenchMOS™technology. Applications ■DCtoDCconvertor

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

SI4410DY

SingleN-ChannelLogicLevelPowerTrenchMOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizeon-stateresistanceandyetmaintainsuperiorswitchingperformance. Thisdeviceiswellsuitedforlowvoltageandbattery

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SI4410DY

N-Channel30-V(D-S)MOSFET

FEATURES   TrenchFETPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SI4410DY

HEXFETPowerMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowon-resistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications TheSO-

IRF

International Rectifier

SI4410DY

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SI4410DY

N-channelTrenchMOSlogiclevelFET

1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SI4410DY-HF

N-ChannelMOSFET

■Features ●VDS(V)=30V ●ID=10A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

SI4410DYPBF

HEXFET짰PowerMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRF

International Rectifier

SI4410DYPBF

N-ChannelMOSFET

Description ThisN-channelHEXFET®PowerMOSFETisproducedusingInternationalRectifiersadvancedHEXFETpowerMOSFETtechnology.Thelowonresistanceandlowgatechargeinherenttothistechnologymakethisdeviceidealforlowvoltageorbatterydrivenpowerconversionapplications. TheSO-

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格
BEL
24+
4880
全新原装数量均有多电话咨询
询价
BEL
2022+
4880
原厂代理 终端免费提供样品
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BEL
20+
电路保护
6985
就找我吧!--邀您体验愉快问购元件!
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Bel
22+
NA
1000
加我QQ或微信咨询更多详细信息,
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Panduit
2022+
1
全新原装 货期两周
询价
BEL
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
集电通/JDT
25+
DIP
860000
明嘉莱只做原装正品现货
询价
集电通/JDT
2450+
DIP
6540
只做原厂原装现货或订货假一赔十!
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STELVIO
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
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BEL
23+
DIP2
30000
原装现货,假一赔十.
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更多MRT4410D供应商 更新时间2025-7-19 13:26:00