MRFIC0919

3.6V GSM GaAs Integrated Power Amplifier; \n•Typical 3.6 V Characteristics:\n\n•RF Input Power: 3.0 dBm\n\n•RF Output Power: 35.3 dBm\n\n•Efficiency: 48% Typical\n\n\n\n\n•Single Positive Supply Solution\n\n;

Overview The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply and Gate-Drain priority switching are built in the chip using RF rectification, which avoids any spurious signal. The device is packaged in the TSSOP-16EP package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact.\n Archived content is no longer updated and is made available for historical reference only.\n

DS0919

GaAsPINDiodeSP2T

FEATURES ■3-5GHz ■1.8dBInsertionLoss ■124dBIsolation ■24nSecSwitchingSpeed ■Non-Reflective ■TTLDriver ■SMAConnectors

ENA0919

Bi-CMOSICForVCMsConstant-currentDriverIC

LPL0919

LEADERTYPE

LPL0919

Shape&Dimensions/RecommendedSolderLandPattern

MGF0919A

High-powerGaAsFET(smallsignalgainstage)

MGF0919A

L&SBANDGaAsFET[SMDnon-matched]

MGF0919A

L&SBANDGaAsFET[SMDnonmatched]

XB0919A

ALLDIMENSIONSINMM[INCH]