MRF9100

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom921to960MHz,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceampl

MRF9100R3

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom921to960MHz,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceampl

MRF9100SR3

GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandEDGEbasestationapplicationswithfrequenciesfrom921to960MHz,thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceampl

MRF9120

RF Power Field Effect Transistors

TheRFMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom865to895MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,com

MRF9120LR3

RF Power Field Effect Transistors

TheRFMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom865to895MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,com

MRF9120R3

RF Power Field Effect Transistors

TheRFMOSFETLineRFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom865to895MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge-signal,com

MRF914

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: DesignedprimarilyforuseinHighGain,lownoisegeneralpurposeamplifiers.Alsoexcellentforhighspeedswitchingapplications. Features •SiliconNPN,highFrequency,To-72packaged,Transistor •HighPowerGain-Gmax=15dB(typ)@f=500MHz •LowNoiseFigure NF=

MRF914

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: DesignedprimarilyforuseinHighGain,lownoisegeneralpurposeamplifiers.Alsoexcellentforhighspeedswitchingapplications. Features •SiliconNPN,HighFrequencyTransistor •HighPowerGain-Gmax=15dB(typ)@f=500MHz •LowNoiseFigure:NF=2.5dB(typ)@f=

MRF9180

880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom865to895MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlar

MRF9180S

880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs

TheRFSub–MicronMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesfrom865to895MHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlar

MRF9100LR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9100LSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF9130L

RF Power Field Effect Transistors

MRF9130LR3

RF Power Field Effect Transistors

MRF9130LSR3

RF Power Field Effect Transistors

MRF9135L

RF POWER FIELD EFFECT TRANSISTORS

MRF9135LR3

RF POWER FIELD EFFECT TRANSISTORS

MRF9135LSR3

RF POWER FIELD EFFECT TRANSISTORS

MRF917T1

LOW NOISE HIGH FREQUENCY TRANSISTOR

MRF9120LR5

包装：卷带（TR） 封装/外壳：NI-860 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 65V 880MHZ NI-860