MRF8S9170NR3中文资料飞思卡尔数据手册PDF规格书

920--960 MHz, 50 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 50 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF.

• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 250 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

• Typical Pout @ 1 dB Compression Point ≃ 177 Watts CW

特性 Features

• 100 PAR Tested for Guaranteed Output Power Capability

• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Designed for Digital Predistortion Error Correction Systems

• Optimized for Doherty Applications

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.