MRF7S19100N

1930-1990 MHz，29 W平均值，28 V单载波W-CDMA射频功率LDMOS; • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 17.5 dBDrain Efficiency: 30%Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth\n• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW Peak Tuned Output Power\n• Pout @ 1 dB Compression Point ≥ 100 W CW\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Designed for Digital Predistortion Error Correction Systems\n• 225°C Capable Plastic Package\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel\n;

The MRF7S19100NR1 and MRF7S19100NBR1 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

恩XP

MRF7S19100NB

Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V; • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input SignalPAR = 7.5 dB @ 0.01% Probability on CCDF.Power Gain: 17.5 dBDrain Efficiency: 30%Device Output Signal PAR:  6.1 dB @ 0.01% Probability on CCDFACPR @ 5 MHz Offset: –38 dBc in 3.84 MHz Channel Bandwidth\n• Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW Peak Tuned Output Power\n• Pout @ 1 dB Compression Point ≥ 100 W CW\n• 100% PAR Tested for Guaranteed Output Power Capability\n• Characterized with Series Equivalent Large–Signal Impedance Parameters\n• Internally Matched for Ease of Use\n• Integrated ESD Protection\n• Designed for Digital Predistortion Error Correction Systems\n• 225°C Capable Plastic Package\n• RoHS Compliant\n• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel\n;

The MRF7S19100NR1 and MRF7S19100NBR1 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN-PCS/cellular radio and WLL applications.

恩XP

MRF7S19100NBR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S19100NBR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S19100NR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S19100NR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF7S19100NR1_08

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs