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MRF6VP3450HSR5

N-Channel Enhancement-Mode Lateral MOSFET

文件:1.14744 Mbytes 页数:18 Pages

恩XP

恩XP

MRF6VP3450HSR5

RF Power Field Effect Transistors

文件:642.42 Kbytes 页数:18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP3450HSR5

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:641.67 Kbytes 页数:18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP3450HSR5

RF Power Field Effect Transistors

文件:1.08324 Mbytes 页数:18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP3450HSR6

RF Power Field Effect Transistors

文件:642.42 Kbytes 页数:18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP3450HSR6

RF Power Field Effect Transistors

文件:1.08324 Mbytes 页数:18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP3450HSR6

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

文件:641.67 Kbytes 页数:18 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

MRF6VP3450HSR6

N-Channel Enhancement-Mode Lateral MOSFET

文件:1.14744 Mbytes 页数:18 Pages

恩XP

恩XP

MRF6VP3450H

860 MHz,450 W,50 V宽带射频功率LDMOS

The MRF6VP3450HR6, MRF6VP3450HSR6, MRF6VP3450HR5 and MRF6VP3450HSR5 are designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications • Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAMPower Gain: 22.5 dBDrain Efficiency: 28%ACPR @ 4 MHz Offset: –62 dBc @ 4 kHz Bandwidth\n• Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 450 Watts PEP;

恩XP

恩XP

MRF6VP3450HS

Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V

The MRF6VP3450HR6, MRF6VP3450HSR6, MRF6VP3450HR5 and MRF6VP3450HSR5 are designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications • Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAMPower Gain: 22.5 dBDrain Efficiency: 28%ACPR @ 4 MHz Offset: –62 dBc @ 4 kHz Bandwidth\n• Typical Broadband Two-Tone Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 450 Watts PEP;

恩XP

恩XP

详细参数

  • 型号:

    MRF6VP3450H

  • 功能描述:

    射频MOSFET电源晶体管 VHV6 450W 860MHZ NI1230H

  • RoHS:

  • 制造商:

    Freescale Semiconductor

  • 配置:

    Single

  • 频率:

    1800 MHz to 2000 MHz

  • 增益:

    27 dB

  • 输出功率:

    100 W

  • 封装/箱体:

    NI-780-4

  • 封装:

    Tray

供应商型号品牌批号封装库存备注价格
Freescale(飞思卡尔)
24+
标准封装
7663
我们只是原厂的搬运工
询价
FREESCAL
25+
6500
十七年专营原装现货一手货源,样品免费送
询价
原厂
23+
高频管
5000
原装正品,假一罚十
询价
FREESCA
23+
module
8560
受权代理!全新原装现货特价热卖!
询价
FREESCA
18+
TO-62
85600
保证进口原装可开17%增值税发票
询价
MITSUBI
24+
TO-59
100
价格优势
询价
FREESCALE
25+
高频管
30000
代理全新原装现货,价格优势
询价
FSL
23+
TO-59
8510
原装正品代理渠道价格优势
询价
FREESCAL
23+
3000
原装正品假一罚百!可开增票!
询价
FREESCALE
23+
moudle
50000
全新原装正品现货,支持订货
询价
更多MRF6VP3450H供应商 更新时间2025-12-9 10:20:00