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MRF21010

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellular

MotorolaMotorola, Inc

摩托罗拉

MRF21010LR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellular

MotorolaMotorola, Inc

摩托罗拉

MRF21010LR1

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellular

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MRF21010LSR1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellular

MotorolaMotorola, Inc

摩托罗拉

MRF21010LSR1

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellular

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MRF21030D

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cell

MotorolaMotorola, Inc

摩托罗拉

MRF21030LR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellul

MotorolaMotorola, Inc

摩托罗拉

MRF21030LR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2000to2200MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN--PCS/cellularradioandWL

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF21030LR5

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2000to2200MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN--PCS/cellularradioandWL

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF21030LSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellul

MotorolaMotorola, Inc

摩托罗拉

MRF21030LSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

RFPowerFieldEffectTransistors N--ChannelEnhancement--ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2000to2200MHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN--PCS/cellularradioandWL

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF21030R3

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cell

MotorolaMotorola, Inc

摩托罗拉

MRF21030SR3

RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENANCEMENT- MODE LATERAL MOSFETS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.0to2.2GHz.SuitableforFM,TDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cell

MotorolaMotorola, Inc

摩托罗拉

MRF21045

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularra

MotorolaMotorola, Inc

摩托罗拉

MRF21045

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplicat

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF21045LR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularra

MotorolaMotorola, Inc

摩托罗拉

MRF21045LR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplicat

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF21045LSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularra

MotorolaMotorola, Inc

摩托罗拉

MRF21045LSR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforW-CDMAbasestationapplicationswithfrequenciesfrom2110to2170MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplicat

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF21060

RF Power Field Effect Transistors

2170MHz,60W,28VLATERALN–CHANNELRFPOWERMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom2.1to2.2GHz.SuitableforW–CDMA,CDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalW–CDMAPerformance:2140MHz,28Volts 5MHzOffs

MotorolaMotorola, Inc

摩托罗拉

详细参数

  • 型号:

    MRF210

  • 制造商:

    MOTOROLA

  • 制造商全称:

    Motorola, Inc

  • 功能描述:

    RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

供应商型号品牌批号封装库存备注价格
MOTOROLA
17+
晶体管
265
“芯达集团”专营军工、宇航级IC原装进口现货
询价
FREESCALE
2019+
SMD
6992
原厂渠道 可含税出货
询价
MOTOROLA/摩托罗拉
23+
1688
房间现货库存:QQ:373621633
询价
MOT
800
询价
MOTOROLA
23+
SOP-22
9526
询价
MOTOROLA
23+
高频管
850
专营高频管模块,全新原装!
询价
FREESCALE
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
MOT
22+
原装
2789
全新原装自家现货!价格优势!
询价
MOTOROLA/摩托罗拉
23+
TO-63
338
现货供应
询价
MOT
2020+
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
更多MRF210供应商 更新时间2024-6-10 14:26:00