2.0 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20030R is designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier applications. Suitable for frequency modulated, ampl \n•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics\nOutput Power — 30 Watts (PEP)\nPower Gain — 9.8 dB\n Efficiency — 34%\n Intermodulation Distortion —   –28 dBc\n•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics\n Output Power — 30 Watts\n Power Gain — 11 dB\n Efficien;

恩XP

RF POWER TRANSISTOR

文件：111.05 Kbytes 页数：10 Pages

Motorola

摩托罗拉

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Power Transistors Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range. • Designed for Class B or C, Common Base Power Amplifiers • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts P

文件：102.85 Kbytes 页数：6 Pages

Motorola

摩托罗拉

3.0mm ROUND LED LAMP

文件：161.65 Kbytes 页数：6 Pages

Marktech

Stepping Motor Driver ICs

FEATURES ●Constant-current chopping function (Frequency fixed, separate-oscillation) ●4-phase input (with inhibit for simultaneously turn ON) ●Current levels can be selected in 2 bit digital signal ●A noise cancel function is provided (No externally attached filter needed) ●Protection for pen

文件：425.85 Kbytes 页数：2 Pages

SHINDENGEN