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MRF18085BLR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085BLSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF

MotorolaMotorola, Inc

摩托罗拉

MRF18085BLSR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085BLR3

包装:卷带(TR) 封装/外壳:NI-780 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:FET RF 65V 1.99GHZ NI-78O

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

IE18085P

GaNPowerTransistors

RFHICRFHIC

RFHIC

MRF18085A

RFPowerFieldEffectTransistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085A

TheRFMOSFETLineRFPowerFieldEffectTransistorN-ChannelEnhancement-ModeLateralMOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MotorolaMotorola, Inc

摩托罗拉

MRF18085B

RFPowerFieldEffectTransistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085B

RFPowerFieldEffectTransistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF

MotorolaMotorola, Inc

摩托罗拉

详细参数

  • 型号:

    MRF18085BL

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Freescale Semiconductor

供应商型号品牌批号封装库存备注价格
FREESCALE
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FREESCALE
标准封装
58250
一级代理原装正品现货期货均可订购
询价
FREESCALE
21+
NA
12820
只做原装,质量保证
询价
FREESCALE
NA
8600
原装正品,欢迎来电咨询!
询价
FREESCALE
22+
NA
10000
绝对全新原装现货热卖
询价
FREESCALE
22+
N/A
12245
现货,原厂原装假一罚十!
询价
FREESCALE
23+
NA
25630
原装正品
询价
FREESCALE
22+
NA
21000
原厂原包装。假一罚十。可开13%增值税发票。
询价
FREESCALE
21+
NA
10000
公司原装现货,欢迎咨询
询价
FREESCALE
23+
NA
6000
可订货,请确认
询价
更多MRF18085BL供应商 更新时间2024-5-29 15:00:00