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型号	下载订购	功能描述	制造商上传企业	LOGO
MRF18085A	文件：394.89 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P 文件：394.89 Kbytes 页数：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085A	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085ALR3	文件：394.89 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P 文件：394.89 Kbytes 页数：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085ALSR3	文件：394.89 Kbytes Page：8 Pages	RF Power Field Effect Transistors Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM - GSM EDGE 1805-1880 MHz. • GSM and GSM EDGE P 文件：394.89 Kbytes 页数：8 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale
MRF18085ALSR3	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085ALSR3	文件：379.56 Kbytes Page：8 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085AR3	文件：379.56 Kbytes Page：8 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：379.56 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085AR3	文件：409.77 Kbytes Page：8 Pages	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellu 文件：409.77 Kbytes 页数：8 Pages	Motorola 摩托罗拉	Motorola
MRF18085B	文件：610.58 Kbytes Page：12 Pages	RF Power Field Effect Transistors The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full F 文件：610.58 Kbytes 页数：12 Pages	Motorola 摩托罗拉	Motorola
MRF18085B	文件：445.63 Kbytes Page：12 Pages	RF Power Field Effect Transistors RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. • GSM and GSM EDGE Performance, Full Frequency Band (193 文件：445.63 Kbytes 页数：12 Pages	freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体	freescale

详细参数

型号：
MRF18085
功能描述：
MOSFET N-CHAN 85W 26V NI-78O
RoHS：
是
类别：
分离式半导体产品 >> RF FET
系列：
-
产品目录绘图：
MOSFET SOT-23-3 Pkg
标准包装：
3,000
晶体管类型：
N 通道 JFET
频率：
-
增益：
- 电压 -
测试：
-
额定电流：
30mA
噪音数据：
- 电流 -
测试：
- 功率 -
输出：
- 电压 -
额定：
25V
封装/外壳：
TO-236-3，SC-59，SOT-23-3
供应商设备封装：
SOT-23-3（TO-236）
包装：
带卷(TR)
产品目录页面：
1558(CN2011-ZH PDF)
其它名称：
MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	MRF18085B	MOTOROLA/摩托罗拉	2019+	SMD	6992	原厂渠道可含税出货	询价
深圳市旺财半导体有限公司	MRF18085B	FREESCALE	23+		1688	房间现货库存:QQ:373621633	询价
深圳市一线半导体有限公司	MRF18085B	FRESSCAL	24+	SMD	2		询价
深圳市毅创腾电子科技有限公司	MRF18085B	MOT	23+	高频管	330	专营高频管模块,全新原装!	询价
深圳市佳鑫美电子科技有限公司	MRF18085B	Freescale	25+	SMD	2789	全新原装自家现货!价格优势!	询价
深圳市粤骏腾电子科技有限公司	MRF18085B	FREESCALE	24+		260	现货供应	询价
深圳市百诺芯科技有限公司	MRF18085B	MOTOROLA/摩托罗拉	23+	TO-59	8510	原装正品代理渠道价格优势	询价
上海磐岳电子有限公司	MRF18085B		2023+		5800	进口原装,现货热卖	询价
上海凌岳电子科技有限公司（上海涵恩科技）	MRF18085B		2023+		3000	进口原装现货	询价
深圳市星佑电子有限公司	MRF18085BLS	FREESCALE	05/06+		448	全新原装100真实现货供应	询价

更多MRF18085供应商更新时间2025-11-16 16:04:00

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