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MRF18085A

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MotorolaMotorola, Inc

摩托罗拉

MRF18085A

RF Power Field Effect Transistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085ALR3

RF Power Field Effect Transistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085ALSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MotorolaMotorola, Inc

摩托罗拉

MRF18085ALSR3

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MotorolaMotorola, Inc

摩托罗拉

MRF18085ALSR3

RF Power Field Effect Transistors

DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1800to2000MHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN-PCS/cellularradioandWLLapplications.SpecifiedforGSM-GSMEDGE1805-1880MHz. •GSMandGSMEDGEP

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085AR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MotorolaMotorola, Inc

摩托罗拉

MRF18085AR3

The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.8to2.0GHz.SuitableforTDMA,CDMAandmulticarrieramplifierapplications.TobeusedinClassABforPCN–PCS/cellu

MotorolaMotorola, Inc

摩托罗拉

MRF18085B

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085B

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF

MotorolaMotorola, Inc

摩托罗拉

MRF18085BLR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085BLSR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF

MotorolaMotorola, Inc

摩托罗拉

MRF18085BLSR3

RF Power Field Effect Transistors

RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1930to1990MHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullFrequencyBand(193

freescaleFreescaleiscreatingasmarter

飞思卡尔

MRF18085BR3

RF Power Field Effect Transistors

TheRFMOSFETLine RFPowerFieldEffectTransistors N-ChannelEnhancement-ModeLateralMOSFETs DesignedforGSMandGSMEDGEbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforTDMA,CDMA,andmulticarrieramplifierapplications. •GSMandGSMEDGEPerformance,FullF

MotorolaMotorola, Inc

摩托罗拉

MRF18085ALSR3

包装:卷带(TR) 封装/外壳:NI-780S 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:FET RF 65V 1.88GHZ NI-780S

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MRF18085ALSR5

包装:卷带(TR) 封装/外壳:NI-780S 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:FET RF 65V 1.88GHZ NI-780S

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

MRF18085BLR3

包装:卷带(TR) 封装/外壳:NI-780 类别:分立半导体产品 晶体管 - FET,MOSFET - 射频 描述:FET RF 65V 1.99GHZ NI-78O

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

IE18085P

GaNPowerTransistors

RFHICRFHIC

RFHIC

详细参数

  • 型号:

    MRF18085

  • 制造商:

    FREESCALE

  • 制造商全称:

    Freescale Semiconductor, Inc

  • 功能描述:

    RF Power Field Effect Transistors

供应商型号品牌批号封装库存备注价格
FRESSCAL
08+
SMD
53
询价
FREE/MOT
2339+
SMD
5632
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
FREESCALE
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FSL
22+
2789
全新原装自家现货!价格优势!
询价
MOTOROLA/摩托罗拉
23+
190
现货供应
询价
FREESCA
2020+
Modular
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
FREESCALE
23+
TO-59
8510
原装正品代理渠道价格优势
询价
NXP-恩智浦
24+25+/26+27+
TO-59.高频管
18800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
MOTOROLA
2022
TO-63
88
原厂原装正品,价格超越代理
询价
FREESCALE
17+
0
6200
100%原装正品现货
询价
更多MRF18085供应商 更新时间2024-6-11 15:30:00