| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
GLASSPASSIVATEDSUPERFASTRECTIFIER FEATURES PlasticMaterialhasULFlammability Classification94V-O LowPowerloss,HighEfficiency LowReverseLeakageCurrent SuperFastSwitching,HighEfficiency HighSurgeCurrentCapability FredChipPlanarConstruction | SAMYANGSAMYANG ELECTRONICS CO.,LTD. 三阳电子三阳电子有限公司 | SAMYANG | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6050Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=50A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE6050IAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=50A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEAutomotiveN-ChannelEnhancementModePowerMOSFET Description TheNCEA6050KAusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=50A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEAutomotiveN-ChannelSuperTrenchPowerMOSFET Description TheNCEAP6050AQUusesSuperTrenchtechnologythatis uniquelyoptimizedtoprovidethemostefficienthighfrequency switchingperformance.Bothconductionandswitchingpowerlosses areminimizedduetoanextremelylowcombinationofRDS(ON)and Qg.Thisdeviceisidealforhig | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
DigitalI/OModule | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor GeneralDescription TheselogiclevelN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingpe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Thisveryhighdensityprocesshasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,a | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=48A@TC=25℃ ·DrainSourceVoltage-VDSS=50V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=25mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INVENSENS |
23+ |
QFN24 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
INVENSENSE |
23+ |
QFN24 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NA |
22+ |
6279 |
原装现货假一赔十 |
询价 | |||
INVENSENSE |
2022 |
QFN24 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
NA |
22+ |
N/A |
354000 |
询价 | |||
INVENSENS |
22+ |
QFN24 |
5000 |
询价 | |||
INVENSENS |
2023+ |
QFN24 |
50000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
INVENSENS |
23+ |
QFN24 |
6000 |
假一赔十渠道直销 |
询价 | ||
INVENSENS |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
INVENSEN |
2016+ |
QFN24 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 |
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