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MPMPARCA6040	文件：202.61 Kbytes Page：2 Pages	Mounting plate multiperforated (550x350x2 mm - ⌀3.6 mm)	FIBOX FIBOX Enclosing innovations	FIBOX
APT6040	文件：50.6 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT6040AN	文件：309.49 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=15.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040BN	文件：361.18 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040BN	文件：50.6 Kbytes Page：4 Pages	N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS POWERMOSIV® N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS	ADPOW Advanced Power Technology	ADPOW
APT6040BNR	文件：361.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=18A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040BVFR	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040BVFRG	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040BVR	文件：59.84 Kbytes Page：4 Pages	POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
APT6040BVR	文件：337.51 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040HN	文件：297.87 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=16.5A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
APT6040SVFR	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040SVFRG	文件：150.25 Kbytes Page：4 Pages	POWERMOSVFREDFET POWERMOSV®FREDFET PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout.	ADPOW Advanced Power Technology	ADPOW
APT6040SVR	文件：59.84 Kbytes Page：4 Pages	POWERMOSV POWERMOSV® PowerMOSV®isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV®alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. •Fast	ADPOW Advanced Power Technology	ADPOW
AS6040	文件：3.39073 Mbytes Page：213 Pages	UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
AS6040-BQFM	文件：3.39073 Mbytes Page：213 Pages	UltrasonicFlowMetersforGasMeters GeneralDescription AS6040isanultrasonicflowconverter(UFC)solutiondedicatedtogasmeters,butsuitableforwatermeters,too.Thesystemismadeoffourmajorblocks:supervisor,frontend,postprocessingandinterface.Thesupervisormanagesalltasksandisthemasterofthewholesyst	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
AS6040-QF_DK	文件：1.34859 Mbytes Page：16 Pages	DevelopmentKitUserGuide	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
AS6040-QF_DK_RB	文件：1.34859 Mbytes Page：16 Pages	DevelopmentKitUserGuide	SCIOSENSESciosense B.V. 感奥艾半导体	SCIOSENSE
ATXN6040D	文件：85.17 Kbytes Page：2 Pages	Crystal	CTSCTS Electronic Components 西迪斯西迪斯公司	CTS
BD6040GUL	文件：210.71 Kbytes Page：2 Pages	ChargerProtectionICwithInternalFET	ROHMRohm Semiconductor 罗姆罗姆半导体集团	ROHM

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供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	MPMPC962305D-1R2	MOT	23+	SOP8	5000	原装正品,假一罚十	询价
深圳市惊羽科技有限公司	MPMPP250D68J0F200	MULTICOMP	24+25+/26+27+	车规-薄膜电容	63528	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
上海市鑫鸿达电子	MP-M-R	Patlite	2022+		1	全新原装货期两周	询价

更多MPMPARCA6040供应商更新时间2024-6-4 15:36:00

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