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UPD16876

MOSINTEGRATEDCIRCUIT

FEATURES •OneP-chpowerMOSFETcircuit •Overcurrentdetectorthatoutputsactive-lowcontrolsignalfromdetectionreportpin •Overcurrentlimitertopreventsystemvoltagedrop •Thermalshutdowncircuit •Undervoltagelockoutcircuit •Thiscontrolcircuitcanbeturnedonandoffinde

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD16876

SINGLEPchHIGH-SIDESWITCHFORUSB

DESCRIPTION TheµPD16876isapowerswitchICwithanovercurrentlimiterthatisusedforthepowerbusofaUniversalSerialBus(USB).ThisproducthasonePchpowerMOSFETcircuits,whichhasalow-onresistance(100mΩTYP.),initsswitchingblock.Thisproductboastsanoperatingcurrent

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD16876G

MOSINTEGRATEDCIRCUIT

FEATURES •OneP-chpowerMOSFETcircuit •Overcurrentdetectorthatoutputsactive-lowcontrolsignalfromdetectionreportpin •Overcurrentlimitertopreventsystemvoltagedrop •Thermalshutdowncircuit •Undervoltagelockoutcircuit •Thiscontrolcircuitcanbeturnedonandoffinde

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD16876G

SINGLEPchHIGH-SIDESWITCHFORUSB

DESCRIPTION TheµPD16876isapowerswitchICwithanovercurrentlimiterthatisusedforthepowerbusofaUniversalSerialBus(USB).ThisproducthasonePchpowerMOSFETcircuits,whichhasalow-onresistance(100mΩTYP.),initsswitchingblock.Thisproductboastsanoperatingcurrent

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

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