首页 >MMBTSC945P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications ThetransistorissubdividedintofivegroupsR,O, Y,PandL,accordingtoitsDCcurrentgain. | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
Duo/CoreSolo1.06GHz-1.50GHz | ADL ADL Embedded Solutions | ADL | ||
IntegratedCircuitOperationalAmp Description: TheNTE945isaprecision,highinputimpedanceoperationalamplifierinan8−LeadMetalCantypepackagedesignedforapplicationsrequiringextremelylowinputcurrenterrors.ThisdeviceusessupergaintransistorsinaDarlingtoninputstagetogetinputbiascurrentsthataree | NTE NTE Electronics | NTE | ||
32-BITARM926EJ-SBASEDMCU | NuvotonNuvoton Technology Corporation 新唐科技新唐科技股份有限公司 | Nuvoton | ||
PC/104ModuleWithOnboardIntelAtomN270Processor | AAEONAAEON Technology 研扬科技研扬科技（苏州）有限公司 | AAEON | ||
NPNEpitaxialSiliconTransistor [Promax-Johnton] AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSC. •ComplementtoPJA733 •ExcellentDCCurrentGainLinearly0.1mAto50mA •LowOutputCapacitanceCob=2.5PF(Typ.)@VCB=6V,f=1MHz •LowNoiseFigureNF=2.5dB(TYP.)IC=0.1mA,VCE=6VRg=2KΩ,f=1KHz •DCCurrentGainSelectionAv | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NPNEpitaxialSiliconTransistor [Promax-Johnton] AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSC. •ComplementtoPJA733 •ExcellentDCCurrentGainLinearly0.1mAto50mA •LowOutputCapacitanceCob=2.5PF(Typ.)@VCB=6V,f=1MHz •LowNoiseFigureNF=2.5dB(TYP.)IC=0.1mA,VCE=6VRg=2KΩ,f=1KHz •DCCurrentGainSelectionAv | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
NPNEpitaxialSiliconTransistor [Promax-Johnton] AUDIOFREQUENCYAMPLIFIERHIGHFREQUENCYOSC. •ComplementtoPJA733 •ExcellentDCCurrentGainLinearly0.1mAto50mA •LowOutputCapacitanceCob=2.5PF(Typ.)@VCB=6V,f=1MHz •LowNoiseFigureNF=2.5dB(TYP.)IC=0.1mA,VCE=6VRg=2KΩ,f=1KHz •DCCurrentGainSelectionAv | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
HIGHCURRENTSCHOTTKYBARRIERRECTIFIER Features •HighCurrentCapabilityandLowForwardDrop •HighSurgeCapacity •GuardRingforTransientProtection •LowPowerLoss,HighEfficiency •LeadFreeFinish,RoHSCompliant(Note1) | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
HIGHCURRENTSCHOTTKYBARRIERRECTIFIER | DIODESDiodes Incorporated 美台半导体 | DIODES |
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