首页 >MMBT4403LT1H>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GeneralPurposeTransistors(PNPSILICON) | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
GeneralPurposeTransistors(PNPSILICON) | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
PNPEPITAXIALPLANARTRANSISTOR Description TheMMBT4403LT1isdesignedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | TGS Tiger Electronic Co.,Ltd | TGS | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | AVICTEK Avic Technology | AVICTEK | ||
SwitchingTransistor(PNPSilicon) SwitchingTransistor PNPSilicon Features •Pb−FreePackageisAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SwitchingTransistor SwitchingTransistor PNPSilicon | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
GeneralPurposeTransistor(PNPSilicon) GeneralPurposeTransistors PNPSilicon | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
GeneralPurposeTransistors PNPSilicon •RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | WILLAS | ||
TRANSISTOR(NPN) FEATURES •Powerdissipation PCM:0.225W(Tamb=25℃) •PluseDrain ICM:-0.6mA •Reversevoltage V(BR)CBO:-40V •Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SwitchingTransistor SwitchingTransistor PNPSilicon Features •SPrefixforAutomotiveandOtherApplicationsRequiringUnique SiteandControlChangeRequirements;AEC−Q101Qualifiedand PPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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