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MMBT3906-TP

NPNGeneralPurposeAmplifier

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMBT3906T-TP

NPNGeneralPurposeAmplifier

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •SurfaceMountSOT-523Package •EpitaxialPlanarDieConstruction •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Marking:3N •Halogenfreeavailableupon

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MMBT3906W

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistor PNPSilicon

WEITRON

Weitron Technology

MMBT3906W

GeneralPurposeTransistor

Features •Generalpurposetransistor. •Pb?Freepackageisavailable.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

MMBT3906W

GeneralPurposeTransistor

FEATURES •EpitaxialPlanarDieConstruction •ComplementaryNPNTypeAvailable(MMBT3904W) •IdealforMediumPowerAmplificationandSwitching

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

MMBT3906W

PNPGENERALPURPOSESWITCHINGTRANSISTOR

VOLTAGE40VoltsPOWER150mWatts FEATURES •PNPepitaxialsilicon,planardesign •Collector-emittervoltageVCE=-40V •CollectorcurrentIC=-200mA •BothnormalandPbfreeproductareavailable: Normal:80~95Sn,5~20Pb Pbfree:98.5Snabove

PANJITPan Jit International Inc.

強茂強茂股份有限公司

MMBT3906W

PNPTransistor

■Features ●CollectorCurrentCapabilityIC=-0.2A ●CollectorEmitterVoltageVCEO=-40V ●ComplementarytoMMBT3904W)

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

MMBT3906W

SiliconPNPtransistorinaSOT-323PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-323PlasticPackage. Features Lowcurrent,Lowvoltage. Applications Generalpurposeamplifierandswitching.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

MMBT3906W

PNPSiliconEpitaxialPlanarTransistor

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

MMBT3906WG

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon

ZOWIEZowie Technology Corporation

智威智威科技股份有限公司

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