首页 >MMBT3906A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
40VMatchedPairPNPSmallSignalTransistors | FUTUREWAFER FutureWafer Tech Co.,Ltd | FUTUREWAFER | ||
PNPPlasticEncapsulatedTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TRANSISTOR(PNP) FEATURES ●WedeclarethatthematerialofproductcompliancewithRoHS requirementsandHalogenFree. ●-CARforautomotiveandotherapplicationsrequiringuniquesiteand controlchangerequirements;AEC-Q101qualifiedandPPAPcapable. | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
DUALTRANSISTOR | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | YEASHIN | ||
PNPSiliconEpitaxialPlanarTransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
S0OT-363Plastic-EncapsulateTransistors FEATURES *Epitaxialplanardieconstruction *®ldealforlowpoweramplificationandswitching | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TRANSISTOR DESCRIPTION PNPEpitaxialplanarSiliconTransistor FEATURES EpitaxialPlanarDieConstruction ComplementaryNPNTypeAvailable(MMBT3904E) Ultra-SmallSurfaceMountPackage AlsoAvailableinLeadFreeVersion APPLICATION GeneralPurposeAmplifier,switching Forportablee | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
Smallsignalapplication Descriptions •Smallsignalapplication •Switchingapplication Features •Lowcollectorsaturationvoltage •Lowcollectoroutputcapacitance •ComplementarypairwithMMBT3904EF | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
40VPNPSMALLSIGNALTRANSISTORINDFN0806 Features •BVCEO>-40V •IC=-200mAhighCollectorCurrent •PD=435mWPowerDissipation •0.48mm2packagefootprint,16timessmallerthanSOT23 •0.4mmheightpackageminimizingoff-boardprofile •ComplementaryNPNTypeMMBT3904FA •TotallyLead-Free&FullyRoHScompliant(Notes | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
GeneralPurposeTransistor | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
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