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MMBT3906-Q

40V,200mAPNPswitchingtransistor

Featuresandbenefits •CollectorcurrentcapabilityIC=-200mA •Collector-emittervoltageVCEO=-40V •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications Applications •Generalswitchingandamplification

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

MMBT3906RF

350mW,PNPSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3906RF

350mW,PNPSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3906RFG

350mW,PNPSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3906RFG

350mW,PNPSmallSignalTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

MMBT3906SL

PNPEpitaxialSiliconTransistor

Features •Generalpurposeamplifiertransistor. •Ultrasmallsurfacemountpackageforalltypes(max0.43mmtall) •Suitableforgeneralswitching&amplification •Wellsuitedforportableapplication •Ascomplementarytype,NPNMMBT3904SLisrecommended. •Pbfree

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT3906T

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODESDiodes Incorporated

美台半导体

MMBT3906T

PNPEpitaxialSiliconTransistor

Features •Generalpurposeamplifiertransistor. •Ultra-SmallSurfaceMountPackageforalltypes. •Suitableforgeneralswitching&amplification •Wellsuitedforportableapplication •Ascomplementarytype,NPNMMBT3904Tisrecommended

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MMBT3906T

PNPSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •BVCEO>-40V •IC=-200mACollectorCurrent •EpitaxialPlanarDieConstruction •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMBT3904T •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Qualif

DIODESDiodes Incorporated

美台半导体

MMBT3906T

GeneralPurposeTransistorPNPSilicon

GeneralPurposeTransistorPNPSilicon P/bLead(Pb)-Free

WEITRON

Weitron Technology

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