NPN Silicon Low Noise, High-Frequency Transistors

文件：274.88 Kbytes 页数：14 Pages

Motorola

摩托罗拉

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 页数：17 Pages

Motorola

摩托罗拉

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise • High Current-Gain Bandwidth Product APPLICATIONS • Designed for use in high gain , low noise small-signal amplifiers.

文件：260.82 Kbytes 页数：9 Pages

ISC

无锡固电

Silicon NPN RF Transistor

DESCRIPTION • Low Noise • High Current-Gain Bandwidth Product APPLICATIONS • Designed for use in high gain , low noise small-signal amplifiers.

文件：69.9 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 页数：17 Pages

Motorola

摩托罗拉

NPN Silicon Low Noise, High-Frequency Transistors

The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. • Fully Implanted Base and Emitter Structure • 9 Finger, 1.25 Micron Geome

文件：309.76 Kbytes 页数：17 Pages

Motorola

摩托罗拉

NPN Silicon Low Noise, High-Frequency Transistors

文件：274.88 Kbytes 页数：14 Pages

Motorola

摩托罗拉

NPN Silicon Low Noise, High Frequency Transistor

Overview Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. Archived content is no longer updated and is made available for historical reference only. • Fully Implanted Base and Emitter Structure\n• 9 Finger, 1.25 Micron Geometry with Gold Top Metal\n• Gold Sintered Back Metal\n• Available in tape and reel packaging options:\nT1 suffix = 3,000 units per reel.;

恩XP

恩智浦

NPN Silicon Low Noise, High Frequency Transistor

Overview Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages. Archived content is no longer updated and is made available for historical reference only. • Fully Implanted Base and Emitter Structure\n• 9 Finger, 1.25 Micron Geometry with Gold Top Metal\n• Gold Sintered Back Metal\n• Available in tape and reel packaging options:\nT1 suffix = 3,000 units per reel\nT3 suffix = 10,000 units per reel;

恩XP

恩智浦