MMBD301M3T5G分立半导体产品的二极管-射频规格书PDF中文资料

MMBD301M3T5G属于分立半导体产品的二极管-射频。由安森美半导体制造生产的MMBD301M3T5G二极管 - 射频射频二极管是一种双端子半导体器件，只允许一个方向通过电流，而限制反方向的电流。该系列器件用于射频匹配电路以进行电子调谐。二极管类型包括 PIN 型、肖特基型和标准型，反向电压范围为 1 至 15,000 V，电流范围为 10 mA 至 20A。

The MMBD301M3T5G device is a spin−off of our popular

SOT−23 three−leaded device. It is designed primarily for

high−efficiency UHF and VHF detector applications. It is readily

adaptable to many other fast switching RF and digital applications

and is housed in the SOT−723 surface mount package. This device is

ideal for low−power surface mount applications where board space is

at a premium.

特性 Features

• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)

• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V

• Reduces Board Space

• These Devices are Pb−Free and Halogen Free/BFR Free