首页 >MM1302EFBE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
ProtectionofLithiumIonBatteries(twocellsinseries) Outline ThisICisforprotectingalithiumionbatteryfromovercharging,excessdischarging,andovercurrent.Ifabnormalitiesoccurduringchargingandexcessvoltageisapplied,ithasafunctionthatturnsofftheexternalFETswitchwhenvoltageisappliedtoeachbatterybeyondaspecifi | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
ProtectionofLithiumIonBatteries(twocellsinseries) Outline ThisICisforprotectingalithiumionbatteryfromovercharging,excessdischarging,andovercurrent.Ifabnormalitiesoccurduringchargingandexcessvoltageisapplied,ithasafunctionthatturnsofftheexternalFETswitchwhenvoltageisappliedtoeachbatterybeyondaspecifi | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
AxialLeadedLEDLamps FEATURES •Allplasticmoldtype •Willfitinsmallspace •Lowcurrentoperation | Marktech Marktech Corporate | Marktech | ||
AxialLeadedLEDLamps FEATURES •Allplasticmoldtype •Willfitinsmallspace •Lowcurrentoperation | Marktech Marktech Corporate | Marktech | ||
MarktechAxialLeadedLensedVersionLEDs FEATURES •Allplasticmoldtype •Willfitinsmallspace •Lowcurrentoperation | Marktech Marktech Corporate | Marktech | ||
TMOSPOWERFET20AMPERES30VOLTS HDTMOSE-FETHighDensityPowerFETdpakforSurfaceMount N-ChannelEnhancementModeSiliconGate ThisadvancedHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecovery | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
TMOSPOWERFET42AMPERES30VOLTSRDS(on)=22mohm ThisadvancedhighcelldensityHDTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedforlowvoltage,highspeedswitchingapplicationsinpowersupplie | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
15AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS200VOLTS250WATTS ComplementaryNPN-PNPSiliconPowerBipolarTransistor TheMJ3281AandMJ1302AarePowerBasepowertransistorsforhighpoweraudio,diskheadpositionersandotherlinearapplications. •Designedfor100WAudioFrequency •GainComplementary: —GainLinearityfrom100mAto7A —Hi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
MEDIUMPOWERAMPLIFIERGaAsMMIC | NJRCNew Japan Radio 新日本无线株式会社 | NJRC |
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