首页 >MM1104BFFE>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
MonolithicIC Outline ThisICwasdevelopedforusein3Vheadphonestereos.Itincorporatesallthebasicfunctionsoftapeplayers. MitsumihaspreviouslyofferedtheLAG665,LAG668,LAG673andMM1006asone-chipversions.However,thisICistheresultofathroughreviewandredesignextendingtocir | MITSUMIMitsumi Electronics, Corp. 三美三美电机株式会社 | MITSUMI | ||
SwitchingDiodeArray DESCRIPTION Theselowcapacitancediodearraysaremultiple,discrete,isolatedjunctionsfabricatedbyaplanarprocessandmountedina14-PINpackageforuseassteeringdiodesprotectinguptoeightI/OportsfromESD,EFT,orsurgebydirectingthemeithertothepositivesideofthepowers | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
SwitchingDiodeArraySteeringDiodeTVSArray | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
CascadableSiliconBipolarMMICAmplifier | HPAgilent(Hewlett-Packard) 安捷伦科技安捷伦科技有限公司 | HP | ||
DOLBYPROLOGICSURROUNDDECODER | NJRCNew Japan Radio 新日本无线株式会社 | NJRC | ||
NewJRCSAWFILTER | NJRCNew Japan Radio 新日本无线株式会社 | NJRC | ||
IntegratedCircuitWideandNarrowBandAmp,FM/IFLimiter Applications: •ForFMIFAmplifier •ForTVSIFAmplifier | NTE NTE Electronics | NTE | ||
SiliconPhotoTransistor Structure 1.1ChipSize:0.42mmX1.17mm 1.2Chipthickness:280±20um 1.3Metallization:Top-Al,Bottom-Au 1.4Passivation:SiliconNitride 1.5BondingPadSize -Emitter:130um -Base:60umX60um 1.6ActiveArea:0.31mmX0.46mm | KODENSHIKODENSHI_AUK CORP. 可天士可天士光电子集团 | KODENSHI | ||
MutiportSIDAtor | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
SIDACtorMultiportSeries-MS-013 | Littelfuselittelfuse 力特力特公司 | Littelfuse |
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