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NTD5803N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=76A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTD5803N

PowerMOSFET40V,76A,SingleN?묬hannel,DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTD5803NG

PowerMOSFET40V,76A,SingleN?묬hannel,DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTE5803

NTE5800thruNTE5809AxialLeadStandardRecoverySiliconRectifiers,3Amp,DO27

Description: TheNTE5800throughNTE5809siliconrectifiersaredesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NTE

NTE Electronics

NVD5803N

PowerMOSFET40V,85A,SingleN?묬hannel,DPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVD5803N

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVD5803N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=85A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

P5803NAG

N-andP-ChannelV(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

P5803NAG

N&P-ChannelEnhancementModeMOSFET

UNIKCWuxi U-NIKC Semiconductor CO.,LTD

旭康微无锡旭康微电子有限公司

PT5803

18AOutputCurrent

TI1Texas Instruments

德州仪器美国德州仪器公司

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