首页 >MKDSSBF0106>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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NCEN-ChannelEnhancementModePowerMOSFET Description TheNCE0106ARusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=100V,ID=6A RDS(ON) | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
NCEN-ChannelEnhancementModePowerMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
10WUltraminiatureOpenFrameSwitchingPowerSupplies | ASTRODYNEAstrodyne Corporation 天成达天成达(昆山)电子有限公司 | ASTRODYNE | ||
10WUltraminiatureOpenFrameSwitchingPowerSupplies | ASTRODYNEAstrodyne Corporation 天成达天成达(昆山)电子有限公司 | ASTRODYNE | ||
LOWPROFILESELF-LEADEDPOWERINDUCTORSDesignedforPCMCIAApplications | pulse Pulse A Technitrol Company | pulse | ||
1.0–6.0GHz18WGaNPowerAmplifier KeyFeatures •FrequencyRange:1–6GHz •PSAT:42.7dBm(PIN=19dBm) •PAE:>40(PIN=19dBm) •PowerGain:24dB(PIN=19dBm) •SmallSignalGain:>31dB •Bias:VD=22V,IDQ=1022mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
1.0–6.0GHz18WGaNPowerAmplifier KeyFeatures •FrequencyRange:1–6GHz •PSAT:42.7dBm(PIN=19dBm) •PAE:>40(PIN=19dBm) •PowerGain:24dB(PIN=19dBm) •SmallSignalGain:>31dB •Bias:VD=22V,IDQ=1022mA •PackageDimensions:7.00x7.00x0.85mm Performanceistypicalacrossfrequency.Please | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO | ||
1.0–6.0GHz35WGaNPowerAmplifier Applications •ElectronicWarfare •Radar •TestInstrumentation •Communications KeyFeatures •FrequencyRange:1–6GHz •PSAT:45.4dBm(PIN=23dBm) •PAE:41%(PIN=23dBm) •PowerGain:22.4dB(PIN=23dBm) •SmallSignalGain:30.2dB •Bias:VD=24V,IDQ=2044mA | QORVOQorvo, Inc 威讯联合威讯联合半导体(德州)有限公司 | QORVO |
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