3.0 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 28 WATTS

Complementary Silicon Plastic Power Transistors for Isolated Package Applications Designed for use in general purpose amplifier and switching applications. Features •Collector−Emitter Saturation Voltage − VCE(sat)= 1.2 Vdc (Max) @ IC= 3.0 Adc •Collector−Emitter Sustaining Volt

文件：90.27 Kbytes 页数：8 Pages

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安森美半导体

Complementary Silicon Plastic Power Transistors

文件：128.1 Kbytes 页数：5 Pages

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安森美半导体

Complementary Silicon Plastic Power Transistors

文件：128.1 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

PNP 双极功率晶体管

The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices. • Collector–Emitter Saturation Voltage –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc\n• Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min)\n• High Current Gain – Bandwidth ProductfT = 3.0 MHz (Min) @ IC = 500 mAdc\n• UL Recognized, File #E69369, to 3500 VRMS Isolation\n• Pb-Free Packages ar;

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安森美半导体

Package：TO-220-3 整包；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A TO220FP

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安森美半导体

Package：TO-220-3 整包；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A TO220FP

ONSEMI

安森美半导体