| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
POWER TRANSISTORS COMPLEMENTARY SILICON ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
5 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 25 VOLTS 15 WATTS ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
NPN Epitaxial Silicon Transistor Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) •ComplementtoMJE210 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
isc Silicon NPN Power Transistor DESCRIPTION •LowCollector–EmitterSaturationVoltage- •DCCurrentGain-BandwidthProduct •HighDCCurrentGain •ComplementtoMJE210 APPLICATIONS •Designedforlowvoltage,low-power,high-gainaudioamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
Silicon NPN transistor in a TO-126F Plastic Package. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE210. Applications Designedforgeneralaudioamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
Complementary Silicon Power Plastic Transistors Thesedevicesaredesignedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •HighDCCurrentGain •LowCollector−EmitterSaturationVoltage •HighCurrent−Gain−BandwidthProduct •AnnularConstructionforLowLeakage •TheseDevicesarePb−FreeandareRoHSCo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS PLASTICMEDIUM-POWERCOMPLEMENTARYSILICONTRANSISTORS Designedforuseindriverandoutputstagesincomplementaryaudioamplifierapplications. •HighDCCurrentGain- hFE=750(Win)@IC=30and40Adc •TrueThreeLeadMonolithicConstruction—Emitter-BaseResistors toPreventL | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
Complementary Silicon Power Plastic Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Complementary Silicon Power Plastic Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Complementary Silicon Power Plastic Transistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MEDIUM-POWER NPN SILICON TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
MEDIUM-POWER NPN SILICON TRANSISTORS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
25V
- 最大电流允许值：
5A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD185,BD195,3DA99B,
- 最大耗散功率：
15W
- 放大倍数：
- 图片代号：
B-21
- vtest：
25
- htest：
999900
- atest：
5
- wtest：
15
详细参数
- 型号：
MJE20
- 功能描述：
两极晶体管 - BJT 5A 25V 15W NPN
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
PNP 集电极—基极电压
- VCBO：
集电极—发射极最大电压
- VCEO：
- 40 V 发射极 - 基极电压
- VEBO：
- 6 V
- 增益带宽产品fT：
直流集电极/Base Gain hfe
- Min：
100 A
- 安装风格：
SMD/SMT
- 封装/箱体：
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TO126 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | ||||
铁帽三极管 |
5000 |
公司存货 |
询价 | ||||
ONSEMICONDU |
16+ |
原封装 |
18566 |
原装现货假一罚十 |
询价 | ||
ON |
16+ |
TO-126 |
10000 |
全新原装现货 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON |
1738+ |
TO-126 |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
MOT |
23+ |
TO-126 |
7500 |
专做原装正品,假一罚百! |
询价 | ||
ON进口 |
22+23+ |
TO-126 |
55272 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
ISC |
20+ |
TO-126 |
15800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
FAIRCHILD |
2023+ |
TO-126 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
