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D44E3

SILICONNPNDARLINGTONPOWERTRANSISTORS

CentralCentral Semiconductor Corp

美国中央半导体

D44E3

MonolithicTransistorVeryHighGainDarlingtonAmplifier

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJD44E3

DarlingtonPowerTransistorDPAKForSurfaceMountApplications

Designedforgeneralpurposepowerandswitchingoutputordriver stagesinapplicationssuchasswitchingregulators,converters,and poweramplifiers. Features ElectricallySimilartoPopularD44E3Device HighDCGain−1000Min@5.0Adc LowSat.Voltage−1.5V@5.0Adc Compati

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44E3

iscSiliconNPNDarlingtonPowerTransistor

DESCRIPTION ·HighDCCurrentGain :hFE=1000(Min)@IC=5A ·LowCollector-EmitterSaturationVoltage :VCE(sat)=1.5V(Max)@IC=5A ·MinimumLot-to-Lotvariationsforrobustdeviceperformance andreliableoperation APPLICATIONS ·Designedforgeneral-purposeamplifierandlow-speed swi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJD44E3

NPNDARLINGTONPLASTICPOWERTRANSISTOR

NPNDARLINGTONPLASTICPOWERTRANSISTOR ForGeneralPurposePowerandSwitchingOutputorDriverStagesinApplicationssuchas SwitchingRegulators,ConvertersandPowerAmplifiers

CDIL

Continental Device India Limited

MJD44E3

DarlingtonPowerTransistorDPAKForSurfaceMountApplications10AMPERES80VOLTS,20WATTS

DarlingtonPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features •ElectricallySimilartoPopularD44E3Device •HighDCGain−100

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJD44E3

NPNDARLINGTONSILICONPOWERTRANSISTOR10AMPERES80VOLTS20WATTS

DarlingtonPowerTransistor DPAKForSurfaceMountApplication ...forgeneralpurposepowerandswitchingoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. •LeadFormedforSurfaceMountApplicationinPlasticSleeves(NoSuf

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

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