首页 >MJD340TFMOS>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HighVoltageGeneralPurposeApplications HighVoltageGeneralPurposeApplications •HighCollector-EmitterBreakdownVoltage •SuitableforTransformer •ComplementtoMJE350 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
COMPLEMETARYSILICONPOWERTRANSISTORS DESCRIPTION TheMJE340isaSiliconEpitaxialPlanarNPNtransistorintendedforuseinmediumpowerlinearandswitchingapplications.ItismountedinSOT-32. ThecomplementaryPNPtypeisMJE350. ■STMicroelectronicsPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES APPLICATIONS ■LI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
0.5AMPEREPOWERTRANSISTORNPNSILICON300VOLTS20WATTS PlasticMediumPowerNPNSiliconTransistor ...usefulforhigh–voltagegeneralpurposeapplications. •SuitableforTransformerless,Line–OperatedEquipment •ThermopadConstructionProvidesHighPowerDissipationRatingforHighReliability | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
COMPLEMETARYSILICONPOWERTRANSISTORS ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES APPLICATIONS ■LINEARANDSWITCHINGINDUSTRIAL EQUIPMENT DESCRIPTION TheMJE340isaSiliconEpitaxialPlanarNPN transistorintendedforuseinmediumpower linearandswitchingapplications.Itismountedin | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·Highpowerdissipation APPLICATIONS ·Usefulforhigh-voltagegeneralpurposeapplications ·Suitablefortransformerless,line-operatedequipment | SAVANTIC Savantic, Inc. | SAVANTIC | ||
PlasticMedium?뭁owerNPNSiliconTransistor PlasticMedium−PowerNPNSiliconTransistor Thisdeviceisusefulforhigh−voltagegeneralpurposeapplications. Features •SuitableforTransformerless,Line−OperatedEquipment •ThermopadConstructionProvidesHighPowerDissipationRatingforHighReliability •Pb−FreePackageisAvailable | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNPowerTransistor DESCRIPTION •Collector–EmitterSustainingVoltage-:VCEO(SUS)=300V(Min) •DCCurrentGain-:hFE=30(Min)@IC=50mA •LowCollectorSaturationVoltage-:VCE(sat)=1.0V(Max.)@IC=50mA •ComplementtothePNPMJE350 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrel | TGS Tiger Electronic Co.,Ltd | TGS | ||
COMPLEMENTARYSILICONPLASTICPOWERTRANSITORS DESCRIPTION TheCENTRALSEMICONDUCTORMJE340,MJE350typeareComplementarySiliconPowerTransistorsdesignedforpoweroutputstagesinconsumerproductapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SiliconPNPPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage- :VCEO(SUS)=300V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=50mA ·LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=50mA ·ComplementtothePNPMJE350 APPLICATIONS ·Designedforhighvoltage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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