首页 >MJD210-TF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNP(COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER) COLLECTOR-EMITTERSUSTAININGVOLTAGELOWCOLLECTOR-EMITTER SATURATIONVOLTAGE HIGHCURRENTGAIN-BANDWIDTH PRODUCT-MINfT=65MHz@Ic=-100mA ComplementarytoMJE200 | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
SILICONPNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNPtransistorinJedecSOT-32plasticpackage,designedforlowvoltage,lowpower,highgainaudioamplifierapplications. ■STMicroelectronicsPREFERREDSALESTYPE ■PNPTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
POWERTRANSISTORSCOMPLEMENTARYSILICON ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
Feature Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=-100mA(Min.) •ComplementtoMJE200 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SILICONPNPTRANSISTOR ■STMicroelectronicsPREFERRED SALESTYPE ■PNPTRANSISTOR DESCRIPTION TheMJE210isasiliconEpitaxial-BasePNP transistorinJedecSOT-32plasticpackage, designedforlowvoltage,lowpower,highgain audioamplifierapplications. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
ComplementarySiliconPowerPlasticTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SiliconPNPtransistorinaTO-126FPlasticPackage. Descriptions SiliconPNPtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE200. Applications Designedforgeneralaudioamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
ComplementarySiliconPowerPlasticTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
