首页 >MJD200TM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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5AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON25VOLTS15WATTS ComplementarySiliconPowerPlasticTransistors ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=70(Min)@IC=500mAdc High | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
POWERTRANSISTORSCOMPLEMENTARYSILICON ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. Features •Collector-EmitterSustainingVoltage-VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain-hFE=70(Min)@IC=500mAdc | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNEpitaxialSiliconTransistor Feature •LowCollector-EmitterSaturationVoltage •HighCurrentGainBandwidthProduct:fT=65MHz@IC=100mA(Min.) •ComplementtoMJE210 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscSiliconNPNPowerTransistor DESCRIPTION •LowCollector–EmitterSaturationVoltage- •DCCurrentGain-BandwidthProduct •HighDCCurrentGain •ComplementtoMJE210 APPLICATIONS •Designedforlowvoltage,low-power,high-gainaudioamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ComplementarySiliconPowerPlasticTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTORMJE200,MJE210typesarecomplementarysilicontransistorsdesignedforhighgainamplifierapplications. | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SiliconNPNtransistorinaTO-126FPlasticPackage. Descriptions SiliconNPNtransistorinaTO-126FPlasticPackage. Features Lowcollector-emittersaturationvoltage,highcurrentgainbandwidthproduct,ComplementtoMJE210. Applications Designedforgeneralaudioamplifierapplications. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
ComplementarySiliconPowerPlasticTransistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
ComplementarySiliconPowerPlasticTransistors Thesedevicesaredesignedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •HighDCCurrentGain •LowCollector−EmitterSaturationVoltage •HighCurrent−Gain−BandwidthProduct •AnnularConstructionforLowLeakage •TheseDevicesarePb−FreeandareRoHSCo | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LightningSurgeWithstandFuse | bel Bel Fuse Inc. | bel |
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