MJD200

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD200

Complementary Plastic Power Transistors

ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage−VCEO(sus)=25Vdc(Min)@IC=10mAdc •HighDCCurrentGain−hFE

MJD200

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix)

MJD200

Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=25V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=0.3V(Max)@IC=0.5A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

MJD200-1

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD200T4

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD200

Complementary Plastic Power Transistors

MJD200

Complementary Plastic Power Transistors

MJD200

Complementary Plastic Power Transistors

MJD200_06

Complementary Plastic Power Transistors