Complementary Power Transistors

Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Satu

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安森美半导体

Complementary Power Transistors D2PAK for Surface Mount

Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • F

文件：184.81 Kbytes 页数：7 Pages

ONSEMI

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Complementary Power Transistors D2PAK for Surface Mount

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ONSEMI

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isc Silicon NPN Power Transistors

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ISC

无锡固电

丝印：MJB44H11；Package：D2PAK；Low voltage NPN power transistor

文件：412.51 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：MJB44H11-A；Package：D2PAK；Automotive-grade low voltage NPN power transistor

文件：412.27 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

双极功率晶体管，NPN，10 A，80 V，50 W

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices. • Low Collector-Emitter Saturation Voltage -VCE(sat) = 1.0 V (Max) @ 8.0 A\n• Fast Switching Speeds\n• Complementary Pairs Simplifies Designs\n• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n• These Device;

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80V,10A,General Purpose NPN Bipolar Transistor

Galaxy

银河微电

Package：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 10A D2PAK

ONSEMI

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Complementary Power Transistors D2PAK for Surface Mount

Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • F

文件：184.81 Kbytes 页数：7 Pages

ONSEMI

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