首页 >MIX5315>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DIGITALCLOCKS | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
DIGITALCLOCKS | NSCNational Semiconductor (TI) 美国国家半导体美国国家半导体公司 | NSC | ||
DUALBIASRESISTORTRANSISTORNPN&PNPWITHMONOLITHICBIASRESISTORNETWORK DESCRIPTION TheBRT(BiasResistorTransistor)containsasingle transistorwithamonolithicbiasnetworkconsisting oftworesistors;aseriesbaseresistoranda baseemitterresistor.Thesedigitaltransistorsare designedtoreplaceasingledeviceanditsexternal resistorbiasnetwor | AITSEMIAiT Semiconductor Inc. 创瑞科技AiT创瑞科技 | AITSEMI | ||
DualBiasResistorTransistorNPNPNPSilicon DualBiasResistorTransistor NPN+PNPSilicon P/bLead(Pb)-Free | WEITRON Weitron Technology | WEITRON | ||
DualBiasResistorTransistors | YEASHINYea Shin Technology Co., Ltd 亚昕科技亚昕科技股份有限公司 | YEASHIN | ||
SinglePhaseBridgeRectifier8Amp Features: ●LowForwardVoltageDrop ●SurgeOverloadRating:200A(Peak) ●MountingHoleThrufor#6Screw | NTE NTE Electronics | NTE | ||
NECs1310nmInGaAsPMQWFPLASERDIODEINCANPACKAGEFORFTTHPONAPPLICATIONS | CEL California Eastern Labs | CEL | ||
LASERDIODE 1310nmFORFTTHPONAPPLICATION InGaAsPMQW-FPLASERDIODE DESCRIPTION TheNX5315EHisa1310nmMultipleQuantumWell(MQW)structured Fabry-Perot(FP)laserdiodewithInGaAsmonitorPIN-PD.Thisdeviceis designedforapplicationupto1.25Gb/s. APPLICATION •FTTHPON(B-PON,G-PON | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1310nmFORFTTHPONAPPLICATIONInGaAsPMQW-FPLASERDIODE | CEL California Eastern Labs | CEL | ||
1310nmFORFTTHPONAPPLICATIONInGaAsPMQW-FPLASERDIODE | CEL California Eastern Labs | CEL |
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