首页 >MIX3001>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerTransistors PowerTransistors TO-3Case(Continued) | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
DARLINGTONPOWERTRANSISTORCOMPLEMENTARYSILICON Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain— hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
10AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON60.80VOLTS150WATTS Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=4000(Typ)@IC=5.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
COMPLEMENTARYPOWERDARLINGTONS COMPLEMENTARYPOWERDARLINGTONS TheMJ2500,andMJ2501aresiliconepitaxial-basePNPpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecTO-3metalcase. Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryNPNtypesaretheMJ30 | COMSET Comset Semiconductor | COMSET | ||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3package •DARLINGTON •HighDCcurrentgain •ComplementtotypeMJ2500/2501 APPLICATIONS •Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJ2501isaSiliconEpitaxial-BasePNPpowertransistorsinmonolithicDarlingtonconfiguration,mountedinJedecTO-3metacase.Itisintentedforuseinpowerlinearandswitchingapplications. ■STMicroelectronicsPREFERRED SALESTYPES ■COMPLEMENTARYPNP-NPNDEVI | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
10AmpereDarlingtonPowerTransistorsComplementarySilicon [multicomp] Features: •Medium-powercomplementarySiliconTransistorsforuseasoutputdevicesin complementarygeneralpurposeamplifierapplications. •HighDCCurrentGain hFE=1000(Typical)atIC=5.0A. •MonolithicconstructionwithbuiltBase-EmitterShuntResistors. | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | ETC1 | ||
Medium-PowerComplementarySiliconTransistors Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hpE=4000(Typ)@IQ=5.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterShuntResistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
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