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MIC800

Controleurdeservosderadiocommandeparliasionserie

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

MJE800

MonolithicConstructionWithBuilt-inBase-EmitterResistors

MonolithicConstructionWithBuilt-inBaseEmitterResistors ​​​​​​​ •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE800

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉

MJE800

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

SAVANTIC

Savantic, Inc.

MJE800

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-126package •ComplementtotypeMJE700/701/702/703 •HighDCcurrentgain •DARLINGTON APPLICATIONS •Designedforgeneral–purposeamplifier andlow–speedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE800

SiliconNPNPowerTransistors

SAVANTIC

Savantic, Inc.

MJE800

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE800

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION: TheCENTRALSEMICONDUCTORMJE700,MJE800seriesdevicesaremediumpowercomplementarysiliconDarlingtontransistorsdesignedforaudioamplifierapplicationsascomplementaryoutputdevices.

CentralCentral Semiconductor Corp

美国中央半导体

MJE800G

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800G

PlasticDarlingtonComplementarySiliconPowerTransistors

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800T

POWERTRANSISTORS(4.0A,60-80V,40W)

PLASTICDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. FEATURES *HighDCCurrentGain—hFE=2000(Typ)@IC=2.0A *MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakageMultiplicat

MOSPECMospec Semiconductor

统懋统懋半导体股份有限公司

MJE800T

DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY

Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MJE800T

4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT

...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

MotorolaMotorola, Inc

摩托罗拉

MJE800T

iscSiliconNPNDarlingtonPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE800T

PlasticDarlingtonComplementarySiliconPowerTransistors

...designedforgeneral-purposeamplifierandlow-speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt-inBase-EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJS800-R

TYPEMJSLIGHTNINGSURGEWITHSTANDFUSE

bel

Bel Fuse Inc.

MLPV800

Low-ProfileAntennas-MLPVSeries

Features •Attractive,low-profiledesignformaximumoverheadclearance •Industryleadingwidebandperformanceprovidesoutstandingcoverageacross multiplefrequencybandswithnotuningrequired •Wideband,multi-band,andnogroundplanemodelsavailable •“Easygrip”HDmodelsavailable

PCTEL

PCTEL, Inc

MMT.800

8.35x3.95x5.0mm

CONQUER

Conquer Electronics Co., Ltd.

供应商型号品牌批号封装库存备注价格
THINKWILL
22+
SMD
2789
全新原装自家现货!价格优势!
询价
MITSUBISHI
2520
2000
原装现货特价
询价
MITSUBISHI
16+
原厂封装
2000
原装现货假一罚十
询价
MITSUBISHI
2020+
原厂封装
35000
100%进口原装正品公司现货库存
询价
SMI
23+
SMD
9868
专做原装正品,假一罚百!
询价
SMI
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SMI
24+
SMD
68900
一站配齐 原盒原包现货 朱S Q2355605126
询价
24+
3225
5000
只做原装公司现货
询价
MITSUBISH
23+
3225
50000
全新原装正品现货,支持订货
询价
MITSUBISH
15+
3225
500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
更多MI800G供应商 更新时间2024-9-21 16:01:00