MSN6002F

600V(D-S)N-ChannelEnhancementModePowerMOSFET

MSN6002Z

600V(D-S)N-ChannelEnhancementModePowerMOSFET

MSOX6002A

InfiniiVision6000X-SeriesOscilloscopes

MSOX6002A

InfiniiVision6000X-SeriesOscilloscopes

MVP-6002

ExpandableFanlessEmbeddedComputer

N6002NZ

N-channelMOSFET600V,2A,4.4Ω

Description TheN6002NZisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Lowon-stateresistance RDS(on)=4.4ΩMAX.(VGS=10V,ID=1.0A) •Lowinputcapacitance Ciss=400pFTYP.(VDS=10V,VGS=0V) •Highcurrent ID(DC)=±2.0

NAD-6002

60WOpenFrameSingleOutput

[YCL] Feature: ●90to264Vacuniversalinputrange. ●UL/CUL,TUV,CBsafetymeet(approval). ●EMI/RFImeetVDE&FCClimitB. ●Lowcost&compactsize. ●60Wattsin127´76.2´44.1mmSize. 2YearWarranty.

NID6002N

Self?뭁rotectedFETwithTemperatureandCurrentLimit

Self−ProtectedFETwithTemperatureandCurrentLimit 65V,6.5A,SingleN−Channel,DPAK HDPlus™devicesareanadvancedseriesofpowerMOSFETswhichutilizeONSemiconductor’slatestMOSFETtechnologyprocesstoachievethelowestpossibleon−resistancepersiliconareawhileincorporatingsm

NMC-6002FD

2Ports100GbEQSFP28NetworkManagementCard

Features ƒƒSinglehostNICsolution ƒƒOverlaynetworkssupport:VxLAN&NVGRE ƒƒCPUoffload:TSO,LRO,GRO ƒƒJumboframesupport(9.6KB) ƒƒCompatiblewithFWA-6520&FWA-5020Broadwellplatform

NTE6002

NTE5906,NTE5907,NTE5980thruNTE6005SiliconPowerRectifierDiode,40Amp

SiliconPowerRectifierDiode,40Amp Features: HighSurgeCurrentCapability HighVoltageAvailable DesignedforaWideRangeofApplications AvailableinAnode–to–CaseorCathode–to–CaseStyle