霍尔传感器

• 低功耗CMOS工艺\n• 超低功耗，2.5uA@1.8V\n• 全极输出\n• 工作温度范围：-40℃ ~ +85℃\n• SOT23封装;

Memsic

美新半导体

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

文件：221.19 Kbytes 页数：10 Pages

Motorola

摩托罗拉

LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Vol

文件：221.19 Kbytes 页数：10 Pages

Motorola

摩托罗拉

DUAL HIGH VOLTAGE/ HIGH CURRENT OPERATIONAL AMPLIFIER

DESCRIPTION: The MSK 182, 183, 184 and 185 are dual high power monolithic operational amplifiers ideal for use with a wide variety of loads. With operation from either single or dual supplies, they offer excellent design flexibility. Power dissipation is kept to a minimum with a quiescent current

文件：480.97 Kbytes 页数：8 Pages

MSK