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MTB15N06E

TMOSPOWERFET15AMPERES

MotorolaMotorola, Inc

摩托罗拉

MTB15N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB15N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTB15N06V

PowerFieldEffectTransistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTB15N06V

TMOSPOWERFET15AMPERES

TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth

MotorolaMotorola, Inc

摩托罗拉

MTD15N06

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托罗拉

MTD15N06

TMOSPOWERFET15AMPERES60VOLTS

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托罗拉

MTD15N06V

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

MTD15N06V

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTD15N06V

TMOSPOWERFET15AMPERES60VOLTS

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托罗拉

MTD15N06VL

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM

TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6

MotorolaMotorola, Inc

摩托罗拉

MTD15N06VL

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTM15N06L

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

MTM15N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP15N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP15N06

MTP15N05

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP15N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP15N06L

POWERFIELDEFFECTTRANSISTOR

MotorolaMotorola, Inc

摩托罗拉

MTP15N06V

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MTP15N06V

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.12OHM

TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.12OHM NewFeaturesofTMOSV •On–resistanceAreaProductaboutOne–halfthatofStandardMOSFETswithNewLowVoltage,LowRDS(on)Technology •FasterSwitchingthanE–FETPredecessors FeaturesCommontoTMOSVandTMOSE–FETS •Av

MotorolaMotorola, Inc

摩托罗拉

供应商型号品牌批号封装库存备注价格
N/A
1452
询价
N/A
23+
TO220
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
WALSIN/华新科
23+
NA
50000
全新原装正品现货,支持订货
询价
WALSIN/华新科
2022
NA
80000
原装现货,OEM渠道,欢迎咨询
询价
WALSIN/华新科
24+23+
NA
12580
16年现货库存供应商终端BOM表可配单提供样品
询价
WALSIN/华新科
23+
NA/
13250
原装现货,当天可交货,原型号开票
询价
TOSHIBA
18+
2173
公司大量全新正品 随时可以发货
询价
TOSHIBA
module
150
一级代理 原装正品假一罚十价格优势长期供货
询价
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
询价
TOSHIBA
2018
模块
300
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
更多MG15N06E供应商 更新时间2024-9-23 16:00:00