零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TMOSPOWERFET15AMPERES | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET15AMPERES TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTS TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET15AMPERES60VOLTS TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
POWERFIELDEFFECTTRANSISTOR | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.16Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MTP15N05 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.15Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
POWERFIELDEFFECTTRANSISTOR | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.12OHM TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.12OHM NewFeaturesofTMOSV •On–resistanceAreaProductaboutOne–halfthatofStandardMOSFETswithNewLowVoltage,LowRDS(on)Technology •FasterSwitchingthanE–FETPredecessors FeaturesCommontoTMOSVandTMOSE–FETS •Av | MotorolaMotorola, Inc 摩托罗拉 | Motorola |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
N/A |
1452 |
询价 | |||||
N/A |
23+ |
TO220 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
WALSIN/华新科 |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
WALSIN/华新科 |
2022 |
NA |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
WALSIN/华新科 |
24+23+ |
NA |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
WALSIN/华新科 |
23+ |
NA/ |
13250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
TOSHIBA |
18+ |
2173 |
公司大量全新正品 随时可以发货 |
询价 | |||
TOSHIBA |
module |
150 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
询价 | ||
TOSHIBA |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 |
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