| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=30V,Id=12A) SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
7000SeriesMiniatureToggleSwitches | CK-COMPONENTS C&K Components | CK-COMPONENTS | ||
P-Channel100-V(D-S)MOSFET | AnalogPower Analog Power | AnalogPower | ||
20VP-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
P-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheAO7413usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatecharge,andoperationwithgatevoltagesaslowas1.8V,inthesmallSOT323footprint.Itcanbeusedforawidevarietyofapplications,includingloadswitching,lowcurrentinvertersandlow | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
TTLHD74/HD74SSeries
| HitachiHitachi, Ltd. 日立公司 | Hitachi | ||
N-ChannelMOSFET ■Features ●VDS(V)=30V ●ID=12A(VGS=10V) ●RDS(ON) | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
PowerMOSFET(Vdss=30V,Id=12A) SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V) | UMWUMW 友台友台半导体 | UMW | ||
PowerMOSFET(Vdss=30V,Rds(on)=0.0135ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
ULTARLOWONRESISTANCE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFETPowerMOSFET Description TheseHEXFET®PowerMOSFETsinSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveaval | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
UltraLowOn-Resistance SMPSMOSFET Benefits •LowGatetoDrainChargetoReduce SwitchingLosses •FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) •FullyCharacterizedAvalancheVoltage andCurrent Applications •HighfrequencyDC-DCconverters | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
GenerationVTechnology GenerationVTechnology UltraLowOn-Resistance N-ChannelMosfet SurfaceMount AvailableinTape&Reel Dynamicdv/dtRating FastSwitching 100RgTested Lead-Free Application Features VDS(V)=30V RDS(ON)12m(VGS=10V) RDS(ON)17m(VGS=4.5V) | UMWUMW 友台友台半导体 | UMW | ||
fastsuitching | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MATSUKI |
2425+ |
DFN-8.贴片 |
96500 |
包邮,有问必回,专注现货,Q.微.恭候,备货HK仓 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
MATSUKI |
2022+ |
DFN3.33.3B-8-EP |
50000 |
原厂代理 终端免费提供样品 |
询价 | ||
MATSUKI |
2022+ |
DFN3.33.3B-8-EP |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
JCW |
DFN3*3 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
F112RCE-MOS |
DFN(S)3.3x3.3 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
MATSUK |
2016+ |
DFN |
2627 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
Matsuk |
2017+ |
DFN |
54785 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
Matsuk |
2013+PBF |
DFN |
2227 |
刚到现货加微13425146986 |
询价 | ||
MATSUKI |
23+ |
QFN3X3 |
15000 |
全新原装现货,价格优势 |
询价 |
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