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N4965A

Multi-ChannelBERT12.5Gb/s

KEYSIGHTKeysight Technologies

是德科技是德科技(中国)有限公司

NTD4965N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=68A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

NTD4965N

PowerMOSFET30V,68A,SingleN?묬hannel,DPAK/IPAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTE4965

SurgeClamping,TransientOvervoltageSuppressorBidirectional

Description: TheNTE4900seriesofsiliconTransientSuppressorsdesignedtoprotectvoltagesensitivecomponentsfromhighenergyvoltagetransients.Transientovervoltagesuppressordeviceshavebecomeveryimportantasaconsequenceoftheirhighsurgecapability,extremelyfastresponsetime

NTE

NTE Electronics

NTTFS4965NF

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFS4965NFTAG

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFS4965NFTWG

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

PE4965

CFemaleBulkheadConnectorClamp-SolderAttachmentForRG58,RG55,RG141,RG142,RG223,RG400,.720inchDHole

PASTERNACK

Pasternack Enterprises, Inc.

SI4965DY

DualP-Channel1.8-V(G-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFETs:1.8VRated •ComplianttoRoHSDirective2002/95/EC

VishayVishay Siliconix

威世科技威世科技半导体

SI4965DY

DualP-Channel1.8-V(G-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

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