256-Mbit (32-Mbit x 8, 16-Mbit x 16) Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers

文件：400.69 Kbytes 页数：14 Pages

TI

德州仪器

256-Mbit (32-Mbit x 8, 16-Mbit x 16) Flash Memory Module with Internal Decoding and Boundary Scan I/O Buffers

TI

德州仪器

Radiation-Hardened 32K x 8 PROM

PRODUCT DESCRIPTION The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened, 32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened

文件：69.4 Kbytes 页数：11 Pages

AEROFLEX

256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory

GENERAL DESCRIPTION The Am28F256 is a 256 K Flash memory organized as 32 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non volatile random access memory. The Am28F256 is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be repr

文件：493.47 Kbytes 页数：35 Pages

AMD

超威半导体

256K(32K x8, Chip Erase)FLASH MEMORY

文件：715.28 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory

DESCRIPTION The M28F512 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte. It is organised as 64K bytes of 8 bits. It uses a command register architecture to select the operating modes and thus provides a simple microprocessor int

文件：523.409 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体