首页 >MC803G>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
GaAsSchottkyDiodes | MA-COM M/A-COM Technology Solutions, Inc. | MA-COM | ||
2W,806to905MHzUHFPOWERAMPLIFIERS TheRFLine UHFPowerAmplifiers Capableofwidepowerrangecontrolasencounteredinportablecellularradioapplications(30dBtypical). •MHW803–2806–870MHz •Specified7.5VoltCharacteristics RFInputPower=1mW(0dBm) RFOutputPower=2Watts MinimumGain(VControl | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput GeneralDescription TheMIC803isasingle-voltagesupervisorwithopen-drainresetoutputthatprovidesaccuratepowersupplymonitoringandresetgenerationinmicroprocessor-basedsystems.Thefunctionofthedeviceistoassertaresetsignalifthepowersupplyvoltagedropsbelowthereset | MicrelMicrel Semiconductor 麦瑞半导体 | Micrel | ||
3-PinMicroprocessorSupervisorCircuitwithOpen-DrainResetOutput | MicrelMicrel Semiconductor 麦瑞半导体 | Micrel | ||
SiliconMOSIC ■Features ●Allowingdownsizingofthesetsthroughthereductionofapartscountresultingfromthevoltagestep-uputilizingacoilinsteadofatransformerandemployingthethinsurfacemountingpackage. ●Allowinglowvoltagedrive(adaptabletoasmallandlow-voltagebattery),orVC | PanasonicPanasonic Semiconductor 松下松下电器 | Panasonic | ||
MonolithicConstructionWithBuilt-inBase-EmitterResistors MonolithicConstructionWithBuilt-inBaseEmitterResistors •HighDCCurrentGain:hFE=750(Min.)@IC=1.5and2.0ADC •ComplementtoMJE700/701/702/703 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
SILICONNPNPOWERDARLINGTONTRANSISTORS DESCRIPTION TheMJE802andMJE803aresiliconepitaxial-baseNPNtransistorsinmonolithicDarlingtonconfigurationandaremountedinJedecSOT-32plasticpackage.Theyareintendedforuseinmediumpowerlinearandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT ...designedforgeneral–purposeamplifierandlow–speedswitchingapplications. •HighDCCurrentGain— hFE=2000(Typ)@IC=2.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterResistorstoLimitLeakage Multiplication •ChoiceofPackages— MJE700andMJE800series | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
DARLINGTONPOWERTRANSISTORSCOMPLEMENTARY Thesedevicesaredesignedforgeneral−purposeamplifierandlow−speedswitchingapplications. Features •HighDCCurrentGain−hFE =2000(Typ)@IC =2.0Adc •MonolithicConstructionwithBuilt−inBase−EmitterResistorsto LimitLeakage−Multiplication •ChoiceofPackages−M | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
4.0AMPEREDARLINGTONPOWERTRANSISTORSCOMPLEMENTARYSILICON40WATT50WATT | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
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