首页 >MC778P>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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3WATTGLASSZENERDIODES FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance. | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
IntegratedCircuitDualOperationalAmplifier Description: TheNTE778A(8–LeadDIP)andNTE778SM(SOIC–8SurfaceMount)arelinearintegratedcircuitsdesignedforuseasasummingamplifier,integrator,oramplifierwithoperatingcharacteristicsasafunctionoftheexternalfeedbackcomponents. Features: •NoFrequencyCompensat | NTE NTE Electronics | NTE | ||
IntegratedCircuitDualOperationalAmplifier Description: TheNTE778A(8–LeadDIP)andNTE778SM(SOIC–8SurfaceMount)arelinearintegratedcircuitsdesignedforuseasasummingamplifier,integrator,oramplifierwithoperatingcharacteristicsasafunctionoftheexternalfeedbackcomponents. Features: •NoFrequencyCompensat | NTE NTE Electronics | NTE | ||
N-Channel12Vand20V(D-S)MOSFETs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPerformanceDrMOS??IntegratedPowerStage | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPerformanceDrMOS??IntegratedPowerStage | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPerformanceDrMOS??IntegratedPowerStage | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
HighPerformanceDrMOS??IntegratedPowerStage | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-Channel30V(D-S)MOSFETwithSchottkyDiode | TFUNKVishay Telefunken 威世威世(VISHAY)集团 | TFUNK | ||
LOWVOLTAGEINPUT,3-3.3V/5V/ADJUSTABLEOUTPUTDC-DCCONVERTERWITHSYNCHRONOUSRECTIFIER DESCRIPTION TheST777/778/779aredc-dcconvertersthatstep-upfromlowvoltageinputsrequiringonlythreeexternalcomponents,aninductor(typically22µH)andtwocapacitors.ThedeviceincludeaSinchronousRectifierthateliminatestheneedforanexternalcatchdiode,andallowsregulati | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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