Quad 2-Input XOR Gate

The MC74VHC86 is an advanced high speed CMOS 2−input Exclusive−OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, includin

文件：136.36 Kbytes 页数：5 Pages

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Quad 2-Input XOR Gate

文件：89.73 Kbytes 页数：6 Pages

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Quad 2-Input XOR Gate

The MC74VHC86 is an advanced high speed CMOS 2-input Exclusive-OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a • High Speed: tPD = 4.8ns (Typ) at VCC = 5V\n• Low Power Dissipation: ICC = 2µA (Max) at TA = 25 C\n• High Noise Immunity: VNIH = VNIL = 28% VCC\n• Power Down Protection Provided on Inputs\n• Balanced Propagation Delays\n• Designed for 2V to 5.5V Operating Range\n• Low Noise: VOLP = 0.8V (Max)\n;

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

The MC74VHC86 is an advanced high speed CMOS 2−input Exclusive−OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, includin

文件：136.36 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

The MC74VHC86 is an advanced high speed CMOS 2−input Exclusive−OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, includin

文件：136.36 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

The MC74VHC86 is an advanced high speed CMOS 2−input Exclusive−OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, includin

文件：136.36 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

文件：89.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

文件：89.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

文件：89.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Quad 2-Input XOR Gate

文件：89.73 Kbytes 页数：6 Pages

ONSEMI

安森美半导体