8-Bit Shift Register with Output Storage Register (3-State)

The MC74VHC595 is an advanced high speed 8−bit shift register with an output storage register fabricated with silicon gate CMOS technology. Features • High Speed: fmax = 185 MHz (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 2

文件：269.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

8-Bit Shift Register with Output Storage Register

The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. • High Speed: fmax = 185MHz (Typ) at VCC = 5V • Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28 VCC • Pow

文件：206.96 Kbytes 页数：9 Pages

Motorola

摩托罗拉

8-Bit Shift Register with Output Storage Register

文件：117.57 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

8 位移位寄存器，带输出存储寄存器（3 态）

The MC74VHC595 is an advanced high speed 8-bit shift register with an output storage register fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC595 contains an 8-bit stati • High Speed: fmax = 185MHz (Typ) at VCC = 5V\n• Low Power Dissipation: ICC = 4mA (Max) at TA = 25°C\n• High Noise Immunity: VNIH = VNIL = 28% VCC\n• Power Down Protection Provided on Inputs\n• Balanced Propagation Delays\n• Designed for 2V to 5.5V Operating Range\n• Low Noise: VOLP = 1.0V ;

ONSEMI

安森美半导体

8-Bit Shift Register with Output Storage Register (3-State)

The MC74VHC595 is an advanced high speed 8−bit shift register with an output storage register fabricated with silicon gate CMOS technology. Features • High Speed: fmax = 185 MHz (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 2

文件：269.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

8-Bit Shift Register with Output Storage Register

The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. • High Speed: fmax = 185MHz (Typ) at VCC = 5V • Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28 VCC • Pow

文件：206.96 Kbytes 页数：9 Pages

Motorola

摩托罗拉

8-Bit Shift Register with Output Storage Register (3-State)

The MC74VHC595 is an advanced high speed 8−bit shift register with an output storage register fabricated with silicon gate CMOS technology. Features • High Speed: fmax = 185 MHz (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 2

文件：269.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

8-Bit Shift Register with Output Storage Register

The MC74VHC595 is an advanced high speed 8–bit shift register with an output storage register fabricated with silicon gate CMOS technology. • High Speed: fmax = 185MHz (Typ) at VCC = 5V • Low Power Dissipation: ICC = 4µA (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 28 VCC • Pow

文件：206.96 Kbytes 页数：9 Pages

Motorola

摩托罗拉

8-Bit Shift Register with Output Storage Register (3-State)

The MC74VHC595 is an advanced high speed 8−bit shift register with an output storage register fabricated with silicon gate CMOS technology. Features • High Speed: fmax = 185 MHz (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 2

文件：269.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

8-Bit Shift Register with Output Storage Register (3-State)

The MC74VHC595 is an advanced high speed 8−bit shift register with an output storage register fabricated with silicon gate CMOS technology. Features • High Speed: fmax = 185 MHz (Typ) at VCC = 5 V • Low Power Dissipation: ICC = 4 A (Max) at TA = 25°C • High Noise Immunity: VNIH = VNIL = 2

文件：269.44 Kbytes 页数：12 Pages

ONSEMI

安森美半导体