OKY3447

ADAPTADORMICROUSBADIP5P

Descripción: AdaptadorconvertidorMicroUSBaDip5P,extraeloscincohilosdeunaformasencilla.Laseparaciónentrepinesesde2.54mmylasdimensionesdellaplacaesde15mmx13mm.Estemoduloesidealparaextraerlaalimentacióndeuncargador,adaptaruncableUSBacualquierotroti

PE3447

CableAssembly

PST3447

ICforCMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

PST3447

CMOSSystemReset

Outline ThisICisasystemresetICdevelopedusingtheCMOSprocess.Superlowconsumptioncurrentof0.25µAtyp.hasbeenachievedthroughuseoftheCMOSprocess.Also,detectionvoltageishighprecisiondetectionof±2. Features 1.Superlowconsumptioncurrent0.25µAtyp.(whenVDD

SI3447

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’slowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–5.5A,–20V.RDS(ON)=33mΩ@VGS=–4.5V RDS(ON)=43mΩ@VGS=–2.5V

SI3447BDV

P-Channel12-V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET:1.8-VRated •UltraLowOn-Resistance APPLICATIONS •LoadSwitch •PASwitch  

SI3447CDV

P-Channel12-V(D-S)MOSFET

SI3447DV

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’slowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–5.5A,–20V.RDS(ON)=33mΩ@VGS=–4.5V RDS(ON)=43mΩ@VGS=–2.5V

SI3447DV

P-Channel1.8V(G-S)MOSFET

DESCRIPTION Theattachedspicemodeldescribesthetypicalelectricalcharacteristicsofthep-channelverticalDMOS.Thesubcircuitmodelisextractedandoptimizedoverthe−55to125°Ctemperaturerangesunderthepulsed0-Vto5-Vgatedrive.Thesaturatedoutputimpedanceisbestfitatthe