VOICE SWITCHED SPEAKERPHONE CIRCUIT

文件：962.16 Kbytes 页数：14 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Voice Switched Speakerphone Circuit

恩XP

恩智浦

GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)

DESCRIPTION NECs NE34018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size a

文件：200.1 Kbytes 页数：10 Pages

CEL

L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. FEATURES • Low noise figure NF = 0.6 dB TYP. at f = 2 GHz • High associated gain Ga = 16 dB TYP. at f = 2 GHz • Gate width: Wg = 400 μm • 4 pins super mini mold • Tape & reel packaging only available

文件：114.81 Kbytes 页数：16 Pages

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

FEATURES • Low noise figure: NF = 0.6 dB TYP. @ f = 2 GHz • High associated gain: Ga = 16 dB TYP. @ f = 2 GHz • Gate width: Wg = 400 mm • 4-pin super minimold package • Tape & reel packaging only available

文件：250.2 Kbytes 页数：18 Pages

RENESAS

瑞萨