Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input \"NAND\" Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input NAN

ONSEMI

安森美半导体

QUAD 2 INPUT NAND SCHMITT TRIGGER

The MC14093B Schmitt trigger is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2–input N

文件：223.34 Kbytes 页数：6 Pages

Motorola

摩托罗拉

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Quad 2-Input NAND Schmitt Trigger

The MC14093B Schmitt trigger is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or high noise immunity is desired. The MC14093B may be used in place of the MC14011B quad 2−input N

文件：215.81 Kbytes 页数：8 Pages

ONSEMI

安森美半导体