SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

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安森美半导体

SURFACE MOUNT SCHOTTKY BA R RIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Metal silicon junction,majority carrier conduction Low power loss,high efficiency Built-in strain relief,ideal for automated placement High forward surge current c

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SY

顺烨电子

3A 60V Schottky diode

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SUNMATE

森美特

PDF上传者：深圳冠荣电子有限公司

肖特基功率整流管，表面贴装，3.0A，60V

This device employs the Schottky Barrier principles in a large area metal-to-silicon power diode. • Small Compact Surface Mountable Package with J-Bend Leads\n• Rectangular Package for Automated Handling\n• Highly Stable Oxide Passivated Junction\n• Excellent Ability to Withstand Reverse Avalanche Energy Transients\n• Guardring for Stress ProtectionMechanical Characteristics:\n• Case: Epoxy, Mol;

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安森美半导体

肖特基二极管

First

福斯特

肖特基二极体

Sunmate

森美特

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

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ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：245.74 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：249.27 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIERS

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, hi

文件：51.38 Kbytes 页数：4 Pages

ONSEMI

安森美半导体